Difference between revisions of "SVT Project"

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A completing solution for tracking in the inner detector is the ''''micromegas detector'''', see:  [http://www1.jlab.org/ul/Physics/Hall-B/clas/public/2007-004.pdf CLAS-NOTE-2007-004]
 
A completing solution for tracking in the inner detector is the ''''micromegas detector'''', see:  [http://www1.jlab.org/ul/Physics/Hall-B/clas/public/2007-004.pdf CLAS-NOTE-2007-004]
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== Pulsed Laser for Testing ==
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* [http://www.osti.gov/energycitations/product.biblio.jsp?osti_id=10174848 Pulsed LASER for testing silicon strip detectors] <br>
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** This DO Note describes a pulsed LASER setup for testing silicon strip detectors at the Silicon Detector Facility (SiDet) of Fermilab supporting the related projects and, in particular, the DO Silicon Tracker Upgrade. It will be used in the measurements of the efficiency of individual strips and their coupling. The LASER wavelength is 1060 nm, at which the absorption length in silicon is about 2 mm. The LASER setup is capable of producing light pulses with rise time of less than 1 ns, allowing the measurement of charge pulse shaping at individual strips and their capacitive couplings. Due to the high power output of the LASER, safety considerations are included. Also discussed are precautions for the safety of the LASER itself, and how to limit the light to an area smaller than 50,pm of diameter.

Revision as of 14:39, 28 June 2007

The UNH Silicon Vertex Tracker Project

The UNH Nuclear Physics group will be building a test facility for the Silicon Vertex Tracker (SVT) for CLAS12. The current plan is for the SVT to be build up of 4 concentric layers. Each layer will provide x and y information from two silicon strip detectors, each detector with a different "pitch" for the strips. A scattered particle will thus go through 8 layers of silicon plus the support backing and the detector will provide 4 x,y,z points to compute a track.

Previous work performed at Jlab:

A completing solution for tracking in the inner detector is the 'micromegas detector', see: CLAS-NOTE-2007-004

Pulsed Laser for Testing

  • Pulsed LASER for testing silicon strip detectors
    • This DO Note describes a pulsed LASER setup for testing silicon strip detectors at the Silicon Detector Facility (SiDet) of Fermilab supporting the related projects and, in particular, the DO Silicon Tracker Upgrade. It will be used in the measurements of the efficiency of individual strips and their coupling. The LASER wavelength is 1060 nm, at which the absorption length in silicon is about 2 mm. The LASER setup is capable of producing light pulses with rise time of less than 1 ns, allowing the measurement of charge pulse shaping at individual strips and their capacitive couplings. Due to the high power output of the LASER, safety considerations are included. Also discussed are precautions for the safety of the LASER itself, and how to limit the light to an area smaller than 50,pm of diameter.